Tungsten Diselenide Top-gate Transistors with Multilayer Antimonene Electrodes: Gate Stacks and Epitaxially Grown 2D Material Heterostructures

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

High-frequency self-aligned graphene transistors with transferred gate stacks.

Graphene has attracted enormous attention for radio-frequency transistor applications because of its exceptional high carrier mobility, high carrier saturation velocity, and large critical current density. Herein we report a new approach for the scalable fabrication of high-performance graphene transistors with transferred gate stacks. Specifically, arrays of gate stacks are first patterned on ...

متن کامل

Stretchable graphene transistors with printed dielectrics and gate electrodes.

With the emergence of human interface technology, the development of new applications based on stretchable electronics such as conformal biosensors and rollable displays are required. However, the difficulty in developing semiconducting materials with high stretchability required for such applications has restricted the range of applications of stretchable electronics. Here, we present stretcha...

متن کامل

Exploring the Novel Characteristics of Hetero-Material Gate Field-Effect Transistors (HMGFET’s) with Gate-Material Engineering

The novel characteristics of a new type of MOSFET, the hetero-material gate field-effect transistor (HMGFET), are explored theoretically and compared with those of the compatible MOSFET. Two conceptual processes for realizing the HMG structure are proposed for integration into the existing silicon technology. The two-dimensional (2-D) numerical simulations reveal that the HMGFET demonstrates ex...

متن کامل

Top-gate ZnO nanowire transistors and integrated circuits with ultrathin self-assembled monolayer gate dielectric.

A novel approach for the fabrication of transistors and circuits based on individual single-crystalline ZnO nanowires synthesized by a low-temperature hydrothermal method is reported. The gate dielectric of these transistors is a self-assembled monolayer that has a thickness of 2 nm and efficiently isolates the ZnO nanowire from the top-gate electrodes. Inverters fabricated on a single ZnO nano...

متن کامل

Numerical Analysis of Gate Stacks

Numerous technological innovations, including material and process changes such as high–k gate dielectrics and metal gate electrodes, are investigated to meet the upcoming scaling requirements while keeping the gate leakage current within tolerable limits [1]. To overcome the technological problems, further theoretical and experimental research is needed which requires an extensive use of compu...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Scientific Reports

سال: 2020

ISSN: 2045-2322

DOI: 10.1038/s41598-020-63098-1